Sputtering employs radio frequency energy in a vacuum to create an ionized argon plasma, which collides at high kinetic energies with a target material, causing atoms to be ejected and sublimated. This method, facilitates the production of high-quality films of transparent conductive oxides and semiconductor oxides for charge transport layers with outstanding precision and uniformity. The chamber is integrated in a nitrogen glovebox, includes a RF and a DC source, and allows to deposit over an area of up to 20 x 20 cm², with temperature control on the substrate.