With ALD, ultra-thin films are created through a precise, sequential exposure of a substrate to gas phase precursors, resulting in controlled layer-by-layer deposition with atomic proportions and pin-hole free morphology conformal to the substrate\'s shape. ALD finds extensive application in depositing ultra-thin films of semiconductors and insulators, particularly in microelectronics and nanotechnology. The system includes 4 precursors bottles, a large deposition chamber, and is integrated in a nitrogen glovebox.